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Thursday, 22 October 2026
Friday, 7 August 2026
Basic Electronics Engineering and Basic Definitions
Basic Electronics Engineering
UNIT – I: Semiconductor Fundamentals
Energy Band Theory, Conductors,
Semiconductors and Insulators, Intrinsic Semiconductors, Extrinsic
Semiconductors, Donor and Acceptor Impurities, Carrier Concentration, Drift
Current, Diffusion Current, Hall Effect, PN Junction Formation, Depletion
Region, Barrier Potential, Junction Capacitances and Semiconductor Materials
for Electronic Applications.
UNIT – II: Diodes and Special Semiconductor Devices
PN Junction Diode Characteristics, Diode
Current Equation, Diode Models, Zener Diode Characteristics and Voltage
Regulation, Schottky Diode, Varactor Diode, PIN Diode, Tunnel Diode, Avalanche
and Zener Breakdown Mechanisms, Applications of Special Semiconductor Diodes.
UNIT – III: Bipolar and Field Effect Transistors
Bipolar Junction Transistor (BJT) Construction,
Transistor Action, Transistor Currents, Transistor Configurations, Input and Output
Characteristics, Junction Field Effect Transistor (JFET) Construction and
Characteristics, MOSFET Construction, Depletion and Enhancement MOSFETs, Transfer
Characteristics and Comparison of BJT and FET Devices.
UNIT – IV: Power Semiconductor Devices
SCR Construction and Operation, SCR Characteristics,
Triggering Methods, DIAC, TRIAC, UJT, IGBT, Switching Characteristics, Protection
Techniques and Applications of Power Semiconductor Devices in Electronic
Systems.
UNIT – V: Optoelectronic and Microwave Semiconductor Devices
Light Emitting Diodes (LEDs), Laser
Diodes, Photodiodes, Phototransistors, Opto-Couplers, Solar Cells, Display
Devices, Gunn diode, IMPATT Diode, TRAPATT Diode, BARITT Diode, Microwave
Semiconductor Devices and their Applications in Communication and Sensing
Systems.
Basic Electronics Engineering Basic Definitions
UNIT – I: Semiconductor Fundamentals
Energy Band Theory
Energy
Band Theory explains that electrons are arranged in different energy bands
separated by forbidden energy gaps.
Conductors
A conductor is a material in which
the valence band and conduction band overlap ( Eg=0 eV ), allowing
electrons to move freely.
Semiconductors
A semiconductor is a material with a
small energy band gap between the valence band and conduction band (Si: Eg=1.1 eV,
Ge: Eg=0.67 eV, GaAs: Eg=1.41 eV).
Insulators
An insulator is a material with a
large energy band gap between the valence band and conduction band ( Eg>5 eV
), preventing electrons from reaching the conduction band.
Intrinsic Semiconductors:
An intrinsic semiconductor is a pure
semiconductor without any added impurities, having an equal number of electrons
and holes.
Eg. Silicon (Si), Germanium (Ge).
Extrinsic Semiconductors:
An extrinsic semiconductor is a
semiconductor formed by adding impurities to a pure semiconductor.
P-type
Semiconductor
(Doped with trivalent impurities such as Boron)
N-type
Semiconductor
(Doped with pentavalent impurities such as Phosphorus)
Donor Impurity
A donor
impurity is a pentavalent impurity that donates a free electron to a
semiconductor.
Donor Impurities: Phosphorus (P), Arsenic (As), Antimony (Sb)
Acceptor Impurity
An
acceptor impurity is a trivalent impurity that accepts an electron and creates
a hole in a semiconductor.
Acceptor Impurities: Boron (B), Aluminium (Al), Gallium (Ga)
Carrier Concentration
Carrier concentration is the number
of free charge carriers (electrons or holes) present in a unit volume of a
semiconductor.
Drift Current
Drift current is the current produced by the movement of charge carriers due to an applied electric field.
Diffusion Current
Diffusion current is the current produced by the movement of charge carriers from a region of high concentration to a region of low concentration.
Hall Effect
Hall Effect is the generation of a transverse electric field (or Hall voltage) when a current-carrying conductor or semiconductor is placed in a magnetic field.
PN Junction Formation:
PN junction formation is the process
of joining P-type and N-type semiconductors to form a PN junction.
Depletion Region
The depletion region is a region
depleted of free electrons and holes due to recombination.
Barrier Potential
Barrier
potential is the voltage developed across the depletion region that prevents
the movement of charge carriers.
Typical
Values: Silicon (Si): 0.7V, Germanium (Ge): 0.3V
Junction Capacitances
Junction
capacitance is the capacitance developed across the depletion region of a PN
junction.
Types of
Junction Capacitance:
Transition
(Depletion) Capacitance – under reverse bias.
Diffusion
Capacitance – under forward bias.
Saturday, 18 April 2026
Smith Chart – Construction and Applications and Stub Matching - Single & Double
SMITH CHART AND APPLICATIONS
STUBS :
DOUBLE STUBS:
Tuesday, 24 March 2026
S S Kiran Publications
S S Kiran Publications 2025-26
2025-26 Conferences
1. AICTA-2025 (Milk Adulteration System)
S.
S. Kiran. Design of a Smart Milk
Adulteration Detection System using AI and Sensors. 3rd International Conference on Artificial
Intelligence, Computing Technologies, Internet of Things and Data Analytics
(AICTA-2025), Vizianagaram, India, 2025.
2. ESDA-2025 (Regenerative Braking – E-Bike)
Appalabathula Venkatesh, B. Kiranam, K. Gunasekharan,
S. S. Kiran, J. V. Suresh.
Real-World Validation of Regenerative
Braking-Enabled BLDC E-Bike with an Adaptive Battery Management in a
Sustainable Environment. 8th International Conference on Energy
Systems, Drives and Automations (ESDA-2025), Bhubaneswar, India, 2025.
3. IEEE GIEST-2025 (Low-Cost Innovative E-Bike)
Appalabathula Venkatesh, J. Vijaya Kumar, S. S.
Kiran, Durga Hemanth, Yannam Reddy, Rakesh Kona, Ramana Babu Sanapala. Design
and Development of a Low-Cost Innovative E-Bike with Integrated Speed Limiting
and Geometric Performance Testing: A Case Study Approach. 2025 IEEE 2nd
International Conference on Green Industrial Electronics and Sustainable
Technologies (GIEST-2025), NIT Jamshedpur, India, 2025.
Paper Link : IEEE
4. IEEE GIEST-2025 (AI-Based Signal
Light Management)
S. S. Kiran, K. Guru Charan, Appalabathula Venkatesh, L. Urmila, M. Sanjay, K. Sireesha. Design and Implementation of an AI-Controlled Density-Based Signal Light Management System for Sustainable Smart Cities Using STM32-Nucleo. 2025 IEEE 2nd International Conference on Green Industrial Electronics and Sustainable Technologies (GIEST-2025), NIT Jamshedpur, India, 2025.
Paper Link : IEEE
S. S. Kiran. Design of a Smart Waste Separation System for a Sustainable Future. International Conference on Innovations in Engineering and Technology (ICINVENTS-2025).
Ppaer Link : IEEE
6. IEEE GIEST-2025 (IoT-Based Fault Detection)
S. S. Kiran, Appalabathula Venkatesh, P. Jairam, S. Santhi Kumari, P. Yamini, P. Pradeep Kumar. Design of IoT-Based Smart Fault Detection System for Transmission Lines. 2025 IEEE 2nd International Conference on Green Industrial Electronics and Sustainable Technologies (GIEST-2025), NIT Jamshedpur, India, 2025.
Paper Link : IEEE
2025-26 Papers
1. K. Variations in total electron content (TEC) and earth’s magnetic field at some stage in quiet and disturbed days Kiran, S. S, Gurucharan, K., Anil Kumar, P, Aswini, A, Bhavani, A. and Tanmai, B, Recent Trends in VLSI and Semiconductor Packaging, Book Chapter 73, SMART - 2024 associate with B V Raju Institute of Technology, Edition1st Edition, Published in 2025, Pages: 8, (Taylor & Francis Book Chapter and Scopus)
2. Appalabathula Venkatesh, J. Vijaya Kumar, S. Phani Kumar, S. S. Kiran, K. Ashwini, L. Vijay and B. Muralidhar. A robust machine learning-based system for battery grading and life cycle prediction for electric vehicle applications. International Journal of Information Technology, Original Research Article, Published in 2025, Springer Nature, DOI: 10.1007/s41870-025-02712-9. (Scopus Indexed Journal).
3. Appalabathula Venkatesh, Shankar Nalinakshan, S. Phani Kumar, S. S. Kiran and K. Akash. Optimized control strategies for BLDC motor in sustainable energy systems: Enhancing stability and performance through intelligent controllers, filtering techniques and internal model control. Global Energy Interconnection, Journal Pre-Proof Article, Published in 2025, Elsevier, DOI:10.1016/j.gloei.2025.09.004. (Scopus Indexed Journal).
Paper Link : Jouranl

